| 摘要 |
PURPOSE:To contrive the high integration of a semiconductor integrated circuit by reducing a wiring pitch by connecting the first wiring and the second wiring through an interlayer connection hole formed in an insulation film on the first wiring. CONSTITUTION:An aluminum wiring 3 is formed on an oxide film 2 which is formed on one main surface of a semiconductor substrate 1. A plasma nitride film 4 is coated on these, a photo resist is coated and baked and the surface is made flat. The photo resist and the plasma nitride film 4 are etched until the upper surface of the aluminum wiring layer 3 is exposed. A polyimido film 6 is formed and an interlayer connection hole is formed by plasma etching. Aluminum is coated and patterned, an aluminum wiring 8 is formed and the aluminum wirings 3 and 8 are connected in the interlayer connection hole. |
