| 摘要 |
PURPOSE:To prevent deterioration due to heat generation by forming constitution in which a melting-in to a growth layer of an internal current constriction layer is prevented. CONSTITUTION:A GaAs layer 5 is shaped so that a p type GaAlAs clad layer 6 is grown easily in a liquid-phase manner. A GaAlAs layer 4 obviates the melting-in of an n type GaAs layer 3 into the p type GaAlAs clad layer 6 when the layer 6 grows. The melting-in of Ga1-xAlxAs to a Ga solution reduces with the increase of x. Accordingly, when the p type GaAlAs clad layer 6 grows on the GaAs layer 5, a melting-in more than the GaAs layer 5 melts into the layer 6 is prevented by the GaAlAs layer 4 under the layer 5 though the GaAs layer 5 melts into the layer 6.
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