| 摘要 |
PURPOSE:To reduce remarkably a dark current produced at a boundary between a channel stop and a p-n junction photodiode and further a white point detect by prolonging the electrode of a CCD shift register toward a photodetection section over the channel stop. CONSTITUTION:Poly silicon layers 27, 28, 29 and 30 being the part of the shift register electrode via an insulation film 26 are prolonged up onto a region 32 over a p<+>-layer for the channel stop and provided at the end of an n-layer 23 for the photodiode. A signal electric charge stored in the photodiode 23 is transferred to the shift register in a path shown in solid line arrow (a). In this case, the flow of the signal charge toward the direction shown in broken line arrow (b) is blocked by a channel stop 24. Although the photodiodes are not separated by the channel stop in this case, the substrate for the part is covered by the electrodes 27, 29 and clock pulses phi2, phi4 applied to the electrodes 27, 29 are VL or VI, then no mixture of signal charge is caused.
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