发明名称 MOLECULAR BEAM EPITAXIAL GROWTH APPARATUS
摘要 PURPOSE:To control precisely crystal film thickness which is a product of growth speed and time, by constituting so that a molecular beam strength can be precisely measured. CONSTITUTION:For the purpose of calibrating an ionization gauge 1 for measuring molecular beam strength, the vacuum vessel is evacuated at a super-high vacuum (-10<-7>pa, -10<-9>torr), a calibrating ionization gauge 2 is placed at a given position A, and nitrogen gas is introduced into the vacuum vessel through a leak valve while monitoring the vacuum thereby to realize a standard vacuum. Thereafter, the ionization gauge 1 for measuring molecular beam strength is moved to the same position A to calibrate it using the given standard vacuum. Next, the ionization gauge 1 is placed at a position B opposing to evaporation sources 5, 6, the evaporation sources 5, 6 are heated to generate molecular beams, and the vacuum is read in reference to a corrected value, in order to measure the molecular beam strength.
申请公布号 JPS61115320(A) 申请公布日期 1986.06.02
申请号 JP19840236702 申请日期 1984.11.12
申请人 TOSHIBA CORP 发明人 SUGIYAMA NAOHARU;MASHITA MASAO
分类号 H01L21/203 主分类号 H01L21/203
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