| 摘要 |
PURPOSE:To unnecessitate a long period oxidation treatment process by a method wherein, after a thick single crystal semiconductor layer is formed by performing a beam annealing, the single crystal semiconductor layer located on the selectively oxidized part is removed, and the second insulating layer is coated on the upper surface of the semiconductor layer. CONSTITUTION:A polycrystalline silicon film 13' is coated on the upper surface of the silicon substrate 11 whereon an SiO2 film 12 is selectively formed. Then, the film 13' is heat-fused by scanning a continuous argon laser beam, and it is converted into a single crystal silicon film 13. Subsequently, a resist film mask 14 is formed, and the film 13 located on the exposed part is selectively removed by performing a plasma dry etching using CF4. Then, an SiO2 film 15 (the second insulating layer) is coated in the state wherein the film 14 is left. Then, the mask 14 is dissolved using an organic solvent, and the SiO2 film 15 on the film 14 is removed by performing a lift-off method. As a result, the surface of the film can be flattened without performing a long period oxidizing method. |
