| 摘要 |
PURPOSE:To equalize the growing speed and quality of film by a method wherein phosphine is heated before it is supplied for a reaction tube in a vapor growth equipment wherein monosilane and phosphine are simultaneously supplied for a substrare and phosphorus added silicon is deposited. CONSTITUTION:A mechanical booster pump 13 and a rotary pump 14 are connected to an exhaust system in order to make polysilicon react and deposit by means of LPCVD process. The pressure in a reaction tube 11 may be regulated by means of mainly supplying a pressure regulating nitrogen piping 15 with nitrogen through a nitrogen flow rate controller 16. Monosilane and phosphine as the material gas are supplied from material gas inlets 18. 19. In such a constitution, a quartz glass tube made preheating reaction tube 23 to be heated by a preheater 22 may be connected to the piping 15 on phosphine inlet side immediately before the phosphine inlet 19 so that phosphine preheated thereby may be supplied for the reaction tube 11. |
