| 摘要 |
<p>Molten semiconductor (13), pref. Si, is poured into a frame which has at least a lower part made of graphite, Si-nitride, Si-carbide coated graphite, ceramic or silicon and which is placed on a horizontal or slightly tilted substrate (18), pref. with not more than 30 deg. tilt. One degree of the frame is above the level of the substrate by an amount corresponding with the thickness required of the Si-foil. The lifted edge allows a solidified Si-foil (12) to be withdrawn from the frame by the movement of the substrate, relative to the frame of 1-10 m/minute. - The temp. of the frame and substrate can be controlled independently allowing a temp. gradient to be set up between them. This gradient is smaller at the side where the foil emerges than at the opposite edge. - The relationship (I) between the frame-length a, its wall thickness b, the foil-thickness d, substrate speed Vk and crystallisation speed Vz is (I).</p> |
