摘要 |
PURPOSE:To quicken the signal transmission speed from an input terminal to an output terminal by adding an MOSFET conductive at all times and having a long channel length to a holding circuit comprising two MOSFETs. CONSTITUTION:A potential of the 2nd potential point 4 is impressed to a gate of an FET 8, which is made always conductive. Further, a potential of the 1st potential point 3 is impressed to a gate of an FET 9, which is made normally conductive. When an H level input signal is inputted to the input terminal 1 and the FET 5 is made conductive, the trhough-current is suppressed by the FET 8 having a long channel length. Similarly, the through-current at the conduction of the FET 6 is suppressed by the FET 9 having a long channel length. Thus, the channel length of the FETs 5,6 is reduced to decrease the gate capacitance. Then the load of an inverter 7 is decreased and the signal transmission speed from the input terminal to the output terminal is increased. |