| 摘要 |
PURPOSE:To form a standby charging circuit which requires a low electric power consumption and the small size of a constitution transistor and can drive an output potential up to an electric power source potential by providing an insulating gate-type electrolytic effective transistor, capacity, standby charging means and non-activating means. CONSTITUTION:The capacity 7 having one opposite electrode on a substrate can transmits the fluctuation of a basic potential to a node 9, that is, the other opposite electrode. When a memory activating signal A changes from a low level to a high one and memory enters a standby charging period, a standby charging signal P goes to a high level to charge the node 9 at a high level. Then, when a bit line starts being charged to raise the substrate potential to a high level, the node 9 is further raised from the preliminarily charged level. A MOS transistor 5 is made in the conductive state, exceeding the level available from addition of the threshold voltage of the MOS transistor 5 and an electric power source voltage, and can drive a node 10 up to the electric power source potential.
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