发明名称 METHOD FOR CORRECTING MASK DEFECT
摘要 <p>PURPOSE:To enable to simply correct a white-spot defect by a method wherein a focussed ion beam is made to irradiate at the white-spotted defect of a mask, and the surface of the mask base material of the defective part is formed into a recessed shape. CONSTITUTION:The white-spotted defect of a mask 7 is detected, and the detected position is memorized in a controlling device 8. A stage 6 is shifted by the controlling device 8, an ion beam is made to irradiate on the defective part of the mask, deflection voltage is applied to a deflecting plate, and an ion beam is scanned on the defective part. Moreover, the distance of movement of the stage 6 is monitored by a laser interferometer 11, and the error of movement of said stage is corrected by superposing a correction signal on the deflection signal to be applied to the deflection plate 9. The ion beam is scanned in lattice form on the white-spotted defect, the surface of the substrate G whereon an ion beam is made to irradiate is sputtered, and a number of V-shaped grooves M are formed on the cross-section. As the transmittivity of light at the substrate part, where a number of grooves are formed, is reduced remarkably, the substrate part is turned to the condition same as the normal part where a chromium film is substantially provided.</p>
申请公布号 JPS61113234(A) 申请公布日期 1986.05.31
申请号 JP19840235826 申请日期 1984.11.08
申请人 JEOL LTD 发明人 ANAZAWA NORIMICHI
分类号 G03F1/00;G03F1/72;G03F1/74;H01L21/027;H01L21/30 主分类号 G03F1/00
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