发明名称 ELECTRON BOMBARDMENT TYPE VAPOR DEPOSITING APPARATUS
摘要 PURPOSE:To improve the controllability by placing an ion gun for irradiating a cation beam together with an electron beam from an electron gun on an evaporating source as a material for a thin film made of an insulator in a vacuum vessel so as to inhibit negative electrostatic charge by the electron beam. CONSTITUTION:This electron bombardment type vapor depositing apparatus is provided with an electron gun 4, an evaporating source 6 as a material for a thin film made of an insulator and a substrate 6 on which vapor is deposited in a vacuum vessel 2. An ion gun 3 for irradiating a cation beam together with an electron beam from the electron gun 4 on the evaporating source 5 is further placed in the vacuum vessel 2.
申请公布号 JPS61113763(A) 申请公布日期 1986.05.31
申请号 JP19840235421 申请日期 1984.11.08
申请人 SHARP CORP 发明人 YOSHIDA MASARU;OGURA TAKASHI;TANAKA KOICHI;TANIGUCHI KOJI
分类号 C23C14/30;(IPC1-7):C23C14/30 主分类号 C23C14/30
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