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发明名称
INSULATED GATE MOS FIELD EFFECT TRANSISTOR
摘要
申请公布号
PL137347(B1)
申请公布日期
1986.05.31
申请号
PL19810230318
申请日期
1981.03.25
申请人
发明人
分类号
H01L29/78;H01L29/10;H01L29/739;(IPC1-7):H01L29/78
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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