| 摘要 |
<p>PURPOSE:To add a function for controlling the level of a booster voltage by controlling a MOSFIT as a variable conductance installed between a booster output voltage and the grounding potential point of a circuit with the aid of a control voltage for obeying a write high voltage. CONSTITUTION:Receiving the write high voltage VPP supplied from an external terminal, a program signal PGM, an output enable signal OE and a chip selection signal CE, a control circuit CONT forms a control signal necessary for the action of an internal circuit. The high voltage VPP formed by a booster circuit regulates a selection level at the time of write actions of word lines W1 and W2 and another selection level supplied to gates of column switch MOSFETs Q7-Q9. Thus the voltage of the control gate and drain voltage of a actually selected FAMOS transistor are raised to attain an efficient write.</p> |
