| 摘要 |
<p>PURPOSE:To simplify a process for production by forming first a metal on the surface of an insulating substrate which supports a liquid crystal layer, patterning the metal then forming a transparent conductive film thereon by using a chemical vapor deposition method and patterning the film to signal electrodes and picture element electrodes. CONSTITUTION:A tantalum film on the insulating substrate 4 is first formed to 2,000-3,000Angstrom film thickness by a sputtering method. The tantalum film is then patterned by a photolithography method, by which an island-shaped metallic electrode 1 is obtd. The transparent conductive film is formed in succession thereto by using the chemical vapor deposition method. The surface of the electrode 1 is thermally oxidized in this stage and therefore the insulating film of tantalum pentaoxide is formed between the transparent conductive film and the island-shaped metallic electrode of tantalum simultaneously with the formation of the transparent conductive film. The transparent conductive film is finally patterned by using the photolithographic method, by which the signal electrode 2 and picture element electrode 3 are obtd.</p> |
