发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce the number of wirings by placing a gate turn OFF thyristor (GTO), a freewheel diode, and a snubber diode on the same insulating substrate to form a module, thereby setting a snubber wiring inductance to zero value. CONSTITUTION:A copper base 51 and a ceramic 52 are bonded by solder to a thermal diffusion copper plate 53, and a GTO chip 54, a freewheel diode chip 55, and a snubber diode chip 56 are soldered thereon. The chips of an anode terminal 58, a cathode terminal 59, a gate terminal 60 and a snubber terminal 61 of external terminals are connected with copper circuit boards 62, 64 and the terminal 59 is insulated by a ceramic 57b from the terminal 58. Then, the entirely is molded with resin to complete a GTO module. Thus, the wiring distance between approx. 10mm, and can be reduced to 1/10 or lower as compared with a conventional discrete type.
申请公布号 JPS61112568(A) 申请公布日期 1986.05.30
申请号 JP19840233183 申请日期 1984.11.07
申请人 HITACHI LTD 发明人 MATSUZAKI HITOSHI;HARADA EIJI
分类号 H01L29/74;H02M1/06 主分类号 H01L29/74
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