| 摘要 |
PURPOSE:To reduce minor defects by conducting oxidation on the formation of a field oxide film in an oxidizing atmosphere in which a small quantity of chlorine is made to be contained in oxygen. CONSTITUTION:A thermal oxide film 11 is formed to an silicon substrate 12 at a high temperature of approximately 1,000 deg.C in an atmosphere, in which chlorine is made to be contained in oxygen by 1-3%, while using a nitride film as a mask. Minor defects such as stacking faults existing in the surface of the silicon substrate tend to be expanded further through normal oxidation, but they can be shrunk and reduced through oxidation in the atmosphere in which 1-3% chlorine is made to be contained in oxygen. Since the inclination becomes intense with the increase of a temperature and the lengthening of the time, the method is effective to the oxidation formation of a field oxide film requiring a thick thermal oxide film even in an oxidation process. |
