| 摘要 |
PURPOSE:To inhibit a dispersion on manufacture, and to improve reproducibility by introducing an silicon nitride film selectively formed onto an insulating film shaped to a groove section when the insulating film buried into the groove is etched back. CONSTITUTION:BPSG23 is deposited on a recessed section 22 obtained by etching an silicon substrate 21 and the silicon substrate through a CVD method, and BPSG23 is reflowed through heat treatment. An silicon nitride film 24 is shaped through the CVD method, an silicon compound is spin-on applied onto the film 24, and an silicon oxide film 25 is formed through heat treatment. The silicon nitride film 24 is removed through etching while using the silicon oxide film 25 as a shielding material, and BPSG23 is etched back through a reactive ion etching method while employing the silicon nitride film 24 as the shielding material. Lastly, the silicon nitride film 24 is removed through etching, and groove isolation structure is formed through heat treatment. |
