| 摘要 |
PURPOSE:To reduce junction capacity and to make it possible to perform high speed operation, by forming a gate region, in which the side surfaces facing both source and drain regions are isolated by a wall shaped insulating film, and forming a carrier-concentration decreased region along the wall shaped insulating film in a channel region, which is contacted with the wall shaped insulating film. CONSTITUTION:A gate region 14 is isolated with respect to a source region 12 and a drain region 13 by a wall shaped insulating film 15a. Only the tip of the gate region 14 is contacted with a channel region, i.e., a low-concentration impurity region 11. Therefore, the bonding area of the gate region 14 and the channel region becomes very small in comparison with a conventional JFET. Owing to the presence of a carrier-concentration decreased region, a depletion layer is expanded. This facts also contributes to the reduction in bonding capacity. Therefore, high speed operation becomes possible. |
