| 摘要 |
PURPOSE:To make fine crystallizability detectable, by injecting an ion of an impurity to a specimen semiconductor, measuring concentration of the impurity in the depth direction, and evaluating the crystallizability by the shape of the distribution of the impurity. CONSTITUTION:An ion of an impurity is injected to a semiconductor, the distribution of the injected impurity is the depth direction is measured, and the distribution of the injected ion is examined, so that deviation of the distribution from that of amorphous substance is observed, and crystallizability is evaluated. By this method, fine crystallizability which was undetectable can be detected simply in high sensitivity without lapping a test specimen. |
