发明名称 HIGH VACUUM ION PLATING METHOD
摘要 PURPOSE:To form a high purity coated film having high adhesion by ion plating with only metallic vapor by heating an ionization accelerating cavity made of ceramics to a temp. above the m.p. of a coating metal. CONSTITUTION:An ionization accelerating cavity 1 in a vacuum vessel A is made of ceramics. The cavity 1 is heated to a temp. 1.2-1.5 times the m.p. of a metal in a crucible 4 with a heater 3 to apply 10<-5>-10<-2>Torr vapor pressure to the small space in the cavity 1, and glow discharge plasma of only metallic vapor is generated in the space with a high frequency coil 2. Thus, a coated film having controlled crystallizability is obtd. by ion plating without using a gas such as Ar.
申请公布号 JPS61110761(A) 申请公布日期 1986.05.29
申请号 JP19840231798 申请日期 1984.11.01
申请人 SUMITOMO ELECTRIC IND LTD 发明人 IHARA HIROHIKO;KUDO KAZUNAO
分类号 C23C14/32;(IPC1-7):C23C14/32 主分类号 C23C14/32
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