发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To contrive the reduction in cost of the title device by reducing the used amount of Au by a method wherein the Au-plating thickness of the inner lead part is made smaller than that of the tab. CONSTITUTION:The thickness of Au plating 1 on the tab 2 of a lead frame is 1.5mum or more, while the thickness of Au plating 1 at the inner lead part 3 is smaller 0.3-1.0mum. Such a manner produces no possibility of pellet cracks caused by the leakage failure of an Au-Si eutectic crystal 5 and makes no problem in stripping of Au wires 6 of the inner lead part 3 from contact bonding parts 7. Besides, when the Au plating thickness is 1.5mum or more only at a pellet adhesion part 1a, and the plating 1 thickness of the tab part 1b and the inner lead part 3 is 0.3-1.0mum, then similarly no problem generates. Such a manner enables the large reduction in cost of the title device by reducing the used amount of Au plating.
申请公布号 JPS61111553(A) 申请公布日期 1986.05.29
申请号 JP19850212499 申请日期 1985.09.27
申请人 HITACHI LTD 发明人 OKIKAWA SUSUMU;SATO HAJIME;SUZUKI HIROMICHI;MIKINO HIROSHI
分类号 H01L21/52;H01L21/58;H01L21/60;H01L23/50 主分类号 H01L21/52
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