发明名称 MANUFACTURE OF AMORPHOUS SILICON SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the generation of a flaw and to execute cutting at a high speed by forming an amorphous silicon thin film on a flexible substrate, and subsequently, cutting it to an optional size by a laser beam. CONSTITUTION:An (a)-Si tape 1 which forms an amorphous silicon thin film on a plastic flexible substrate is wound to a roller 2. The end of the tape 1 is fed out and its initial end 4 is pinched by fixing materials 3. Subsequently, an irradiating nozzle 5 of a laser beam is provided on the upper part of the tape 1, and moved in the horizontal direction by irradiating a laser beam 6 onto the tape 1. In this case, the cut line 7 of cutting is formed on the (a)-Si tape 1. By irradiating the laser beam 6, a large quantity of heat are generated locally, therefore, the (a)-Si tape 1 is cut instantaneously. Accordingly, a smooth cutting plane having no flaw is formed, and also the cutting can be executed at a high speed.
申请公布号 JPS61111791(A) 申请公布日期 1986.05.29
申请号 JP19840231759 申请日期 1984.11.02
申请人 SUMITOMO ELECTRIC IND LTD 发明人 NAKAGAMA SHOJI;FUJITA NOBUHIKO;TANAKA SABURO
分类号 B23K26/00;B23K26/40;G03G5/08;G03G5/082;H01L31/0248 主分类号 B23K26/00
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