| 摘要 |
PURPOSE:To contrive to improve the positional accuracy and the pattern size accuracy by eliminating the positional shift of transcription patterns by a method wherein X-ray absorber pattern is arranged on its supporting substrate by being previously corrected with the reference of the center of an X-ray mask. CONSTITUTION:The X-ray mask 2A is formed on an X-ray absorber pattern supporting substrate 3 by being corrected so that the X-ray absorber pattern 4 and the position H of the pattern transcribed on a X-ray-sensitive resist film 6 on a wafer substrate 7 may come to a desired position. Using this X-ray mask 2A, exposure is carried out by making the center C of the mask 2A coincident with the center B of an X-ray source 1 with high accuracy. Next, the wafer substrate 7 is aligned with the X-ray mask 2A by alignment using a Fresnel zone target, thus keeping the mask 2A and the wafer substrate 7 at a required interval (d) from each other. Finally, the X-ray-sensitive resist film 6 is exposed by irradiation with an X-ray a from the X-ray source 1 to the X-ray mask 2A. |
