| 摘要 |
PURPOSE:To prevent the deterioration in characteristic of the solar cell by a method wherein the clear conductive film of a solar cell having amorphous Si layers is adhered by sputtering at low temperature. CONSTITUTION:Using a stainless steel substrate 1 as the substrate of a solar cell, an amorphous Si P-layer 2 is formed by a plasma CVD apparatus in a mixed atmosphere of SiH4, B2H6, and H2 at a substrate temperature of 150-250 deg.C. Next, an amorphous Si I-layer 3 is formed in a mixed atmosphere of SiH4 and H2, and an amorphous Si N-layer 4 is formed in a mixed atmosphre of SiH4, PH3, and H2. Finally, a clear conductive film 5 is adhered by using a magnetron sputtering apparatus. Since the substrate temperature at the time of adhering the clear conductive film is thus kept at low temperature, the photoelectric conversion efficiency of the solar cell can be markedly improved. |
