| 摘要 |
PURPOSE:To enable sufficiently deep etching at the time of selectively etching InP, by using a TiO2 derivative film as the mask material in reactive ion etch ing. CONSTITUTION:The TiO2 derivative 2 is formed on a InP substrate 1. The TiO2 2 is covered with a resist mask 3, and a pattern is formed in the resist mask by using a normal photolithography technique. A pattern is transcribed to the TiO2 derivative 2 by reactive ion etching using CF4-H2 as the reaction gas. Finally, using the mask of the TiO2, the InP is etched by reactive ion etching using the reaction gas of Cl2-Ar series or Cl2-O2 series, resulting in the formation of an etching groove 4. In the case of Cl2-Ar series gas, the ratio of etching rate of InP to TiO2 is approx. 10, and InP of 5mum or more can be etched. |
