| 摘要 |
PURPOSE:To make the part of polycrystalline Si conductor non-conductive without dispersing melt splashes, by using ion implantation to make polycrystalline Si non-conductive. CONSTITUTION:Oxygen ions 7 are generated with an ion source 6. Only the oxygen ions 7 are selected by a mass analysis system 8, and ion beams 7a are obtained by acceleration with an acceleration system 9. These beams are converged by a convergence system 10 and directed to a required point of a semiconductor substrate 5 in an implantation chamber 13 by means of a beam positioner and scanning system 11 interlocking with a computer 12; then, ion implantation is carried out under scanning. Thus, the polycrystalline Si on the semiconductor substrate 5 can be made non-conductive by forming an oxide at a desired point. This method can be applied to form element-isolating layers by changing polycrystalline Si layers into insulators besides making polycrystalline Si wirings non-conductive. Moreover, any ions as well as oxygen, such as nitrogen, which form an insulator by reaction with silicon, can be used. |
