| 摘要 |
PURPOSE:To improve the accuracy of processing micro patterns of submicron by preventing the spread of H2 to the part of a processed film other than the part to be processed, by a method wherein an H2 spout nozzle is provided outside an Si ion beam spout nozzle by surround it, and an intake nozzle outside this H2 spout nozzle by surrounding it. CONSTITUTION:In the atmosphere of an inert gas such as argon, an Si substrate 1 placed on a substrate mount 10 is heated by a heater 11 up to a high temperature of 800-1,200 deg.C. Thereafter, using an Si ion beam processing tool 9, Si ion beams 3 are spouted out of the Si ion beam spout nozzle 6 while H2 is spouted out of the H2 spout nozzle 7 to the part to be processed of an SiO2 film 2. Thereby, the SiO2 at the part to be processed of this film 2 and the Si ions of the Si ion beams 3 are made to react in the presence of H2 into SiO gas, resulting in the formation of a recess 4. Then, this SiO gas is sucked up by the intake nozzle 8 together with the atmosphere of H2 gas and inert gas and exhausted out. |
