| 摘要 |
PURPOSE:To attain the reduction in resistance and the flattening of the title device using polycrystalline Si, by a method wherein phosphorus at his concentration is diffused by a silica film containing phosphorus in polycrystalline Si. CONSTITUTION:An Si oxide film 102 is formed on a P type Si substrate 101, and a gate film 103 made of thin Si oxide film is formed in the active region. A polycrystalline Si layer is formed by deposition thereon, thus forming a wiring electrode 104. Next, to reduce the electrical resistance of the wiring electrode 104, a liquid silicate glass 105 containing phosphorus is formed by spin coating so as to obtain a required thickness at the flat part. At this time, the silicate glass accumulates thick at the step part. In this state, heat treatment is carried out at 800 deg.C or more. Further, an insulation film 106 is formed. Since the silica film 105 flattens the step part, glass flow which has been performed as flattening treatment is unnecessitated. Finally, contact holes are formed, and an Al electrode wiring 107 is formed. |
