Method of manufacturing a bipolar transistor having emitter series resistors.

摘要

A method of manufacturing a bipolar transistor with emitter ballast resistors (R). According to the invention, there are formed on a collector region (1, 2) beside each other a base window (4) and a strip-shaped opening (5). The strip-shaped opening (5) is covered, the base doping is provided and oxide layers (9) of the same thickness are formed in the base window and in the strip-shaped opening. After formation of the emitter fingers (12), base contact windows (14) are formed within the base zone (8) and resistance windows (15) are formed within the strip-shaped opeining (5), whereupon simultaneously base contact zones (17) and mutually separated emitter ballast resistors (R) are formed in these windows.
<??>Application inter alia in transmitter transistors.