| 摘要 |
<p> A semiconductor nonvolatile memory device including a static type RAM element constituted by a flip-flop circuit (Ti, T2, T3, T4) having a pair of loads (T1, T2), each load being supplied by separate power sources (VC1, VC2); an electrically erasable programmable ROM element constituted by a non- volatile memory transistor (T6, T7) operatively connected to the flip-flop circuit; and a control circuit for controlling the supply timing of each of the separate power sources when data stored in the nonvolatile memory transistor is recalled to the flip-flop circuit. In the recall, the supply timing of each of the separate power sources is determined in such a way that the flip-flop circuit is set so as to invert from one state to the other corresponding to the ON/OFF state of the nonvolatile memory transistor.</p> |
