| 摘要 |
<p>PURPOSE:To obtain a semiconductor photocoupler having ready practical use, high withstand voltage, high current transmitting efficiency and less electric irregular characteristics by interposing or holding a transparent solid optical path material having high reflecting surface on the outside between a light emitting element and a photoreceptor. CONSTITUTION:Solid optical path materials 16 aligned in the arbitrary constant length are interposed or held through a transparent silicon resin 15 between a light emitting element 11 and a photoreceptor 12 to obtain a semiconductor photocoupler having less current transmitting characteristic irregularity, wide interval of the element 11 and the photoreceptor 12 and high withstand voltage. Further, the outside of the material 16 is coated by a coating material 33 having high reflectivity for the wavelength of the light emitted from the element 11, and the light emitted from the element 11 is less absorbed to the boundary between the outside epoxy resin 17 or the material 16, and efficiently arrived on the photoreceiving surface of the photoreceptor 12.</p> |
