发明名称 |
METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE HAVING REDUCED LATERAL SPACING BETWEEN BURIED REGIONS |
摘要 |
The lateral spacing between buried regions separated by oxide-isolation regions in a semiconductor structure is reduced to as little as one micron by performing a deep implantation of ions of the conductivity type opposite to that of the buried regions generally into portions of the substrate below the sites where the oxide-isolation regions are formed. |
申请公布号 |
DE3270709(D1) |
申请公布日期 |
1986.05.28 |
申请号 |
DE19823270709 |
申请日期 |
1982.02.09 |
申请人 |
FAIRCHILD CAMERA & INSTRUMENT CORPORATION |
发明人 |
CALDWELL, ROBERT E. |
分类号 |
H01L29/73;H01L21/265;H01L21/316;H01L21/331;H01L21/74;H01L21/76;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L29/73 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|