| 摘要 |
PURPOSE:To improve accuracy of pattern formation by providing a resist film on a substrate to be processed after providing a protection film for reducing strength of secondary electron generated from the substrate to be processed with the exposure by radioactive ray. CONSTITUTION:As a substrate 10 to be processed, a W film (film to be processed) 2 is provided on a silicon wafer 1 and a polycrystalline silicon film 3 is formed thereon by the CVD method as a protection film. Next, an X-ray resist film 4 is deposited on the polycrystalline silicon film 3 and baking is carried out. Next, the X-ray resist film 4 is exposed by the X-ray 6 through the X-ray mask 5. Next, a resist pattern 4' is formed by the developed process and then post-baking is carried out. Thereafter, the protection film and W film are etched by reactive ion etching using the sulfur hexafluoride (SF6) with the resist pattern 4' used as the mask. Next, the remaining resist film is removed to form a pattern. |
