| 摘要 |
PURPOSE:To improve the surge withstand of a protective circuit by increasing a distance between the second contact between a connecting wiring layer with an external circuit and a protective resistor and a high density impurity layer of the portion having the first contact position. CONSTITUTION:The pattern of aluminum wirings on an N<+> type diffused layer 11 for forming a guard line is formed as designated by 9A, and contacts 12A, 12B and 12E, 12F of the portion approached to the aluminum wirings 2A connected to an external circuit are removed. As a result, the contact 12 of the ground potential nearest to the contact 3 becomes 12C and 12G, and since the distance therebetween remarkably increases, the withstand voltage is improved. The width W3 of the bonding pad 1 of the connector with the external circuit and the aluminum wirings 2A for connecting an N<1> diffused layer 5 is increased. This reduces the current density to avoid the concentration of the current, thereby further raising the withstand voltage. |
