SoI semiconductor device and method for producing it.

摘要

The present semiconductor device comprises a first semiconductor substrate (10), and oxide film (12) formed on the substrate (10) and a second semiconductor substrate (14) bonded to the oxide film (12). In particular, the semiconductor substrate further has a monocrystalline silicon layer (16) which is formed by an epitaxial growth method on the second semiconductor substrate (14). Circuit elements are formed within the monocrystalline silicon layer (16).