| 摘要 |
PURPOSE:To improve the uniformity of the characteristics of a device and the reproducibility of the characteristic of a device or the acceleration of a switching speed by inserting a thin film of another metal or semiconductor between a superconductive electrode and a semiconductor to reduce the substantial height of a Schottky barrier. CONSTITUTION:Two superconductive electrodes 4 having 2-layer structure of an Nb layer 2 and an aluminum layer 3 are formed on a sapphire substrate 1. Then, a semiconductor layer 5, a gate oxide film 6, and a control electrode 7 are formed. According to this structure, since the height of a Schottky barrier formed between the semiconductor 5 and the superconductor 2 can be reduced and the osmosis of the superconductive electron pair to the semiconductor side can be facilitated, the distance of the two electrodes 4 is increased to reduce the irregular characteristics of the device. Further, since a channel conductance is improved, the switching can be accelerated. Even if a material for forming the thin metal film 3 employs Au, Sn instead of aluminum, or even if semiconductor including high impurity is used, similar effects can be provided. |
