发明名称 |
Method of fabricating low noise reference diodes and transistors |
摘要 |
The thick oxide over the surface portion of a P/N junction of a reference diode is removed, a thin oxide is grown thereon, and a contaminated shield layer is formed on the thin oxide. In addition to improving the reversed biased diode, the same method improves the forward biased emitter-base surface junction of a vertical bipolar transistor. The shield layer may be biased separate from the transistor.
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申请公布号 |
US4590664(A) |
申请公布日期 |
1986.05.27 |
申请号 |
US19830518598 |
申请日期 |
1983.07.29 |
申请人 |
HARRIS CORPORATION |
发明人 |
PRENTICE, JOHN S.;USCATEGUI, GABRIEL J. |
分类号 |
H01L29/06;H01L29/40;H01L29/732;H01L29/866;(IPC1-7):H01L21/04 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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