发明名称 Integratable circuit for controlling turn-off voltage rate-of-change of non-regenerative voltage-controlled switching semiconductor devices
摘要 An integratable circuit for controlling the turn-off time-rate-of-voltage-change of a non-regenerative power switching device (such as a field-effect transistor, an insulated gate transistor and the like) uses a single capacitive element, in conjunction with a first current source, to provide a ramp voltage generator which is operative only if a ramp generator terminal is disconnected from a circuit common potential. The circuit uses a second current source and a controlled-conduction device to provide a control electrode drive signal to the at least one power switching device, controlling the flow of current through a load from a unipolarity or bipolarity source. The voltage across the controlled-conduction circuit of the power switching device then active is applied in attenuated form to another input of the ramp voltage generator to control the load voltage time-rate-of-change during load current turn-off.
申请公布号 US4591734(A) 申请公布日期 1986.05.27
申请号 US19840604359 申请日期 1984.04.27
申请人 GENERAL ELECTRIC COMPANY 发明人 LAUGHTON, WILLIAM J.
分类号 H02M1/06;H03K17/04;H03K17/042;H03K17/082;H03K17/567;H03K17/687;(IPC1-7):H03K4/94;H03K3/353;H03K17/284 主分类号 H02M1/06
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