| 摘要 |
PURPOSE:To provide a junction element which can operate at a relatively high rate and can be integrated at a high density, by forming an organic conductive polymer thin film with electrolytic polymerization, in the case where the polymer thin film is formed on a conductive substrate with an insulating thin film interposing therebetween. CONSTITUTION:By interposing an insulating thin film 3 between a conductive substrate 1 and an organic conductive polymer film 2, a junction element having a memory effect or a switching effect can be provided. In such a junction element, the organic conductive polymer thin film 2 is formed with electrolytic polymerization. Thus a junction element which can operate at a relatively high rate and therefore is adapted for a memory switch, etc., is obtained. |
