| 摘要 |
PURPOSE:To obtain a light-emitting unit having good directivity, by providing a compound semiconductor substrate with a recess having a predetermined profile, by forming metal film on the oblique planes of the recess, by utilizing them as a concave mirror to reflect light emitted from a light-emitting region provided within the recess and thereby inhibiting the diffusion of the light. CONSTITUTION:An N type GaAs substrate 11 is provided with a PSG film 31 having an about 100mum diameter window, and is anisotropically etched with a sulfate solution so as to produce a recess 12 having a depth of about 100mum. The PSG31 is then removed, and Al2O3 14 and PSG15 are layered. These layers are etched with phosphoric- acid or HF solution so that the bottom 32 of the recess 12 is provided with an aperture. Zn is diffused to produce a P type layer 13 (emitting red light) An SiO2 layer 16 is superposed thereon and an aperture 33 is provided. Subsequently, Al 17 is vapor deposited and an aperture 34 smaller than the aperture 33 is provided. Thus, a light- emitting semiconductor device is completed. Alternatively, the PSG film may be left in the recess so as to provide a protruded portion. In this case, light-emitting regions are provided in the bottom and protruded portions. Since the Al film 17 acts as a reflection mirror, light can be obtained with good directivity. |
