发明名称 SEMICONDUCTOR MANUFACTURING EQUIPMENT
摘要 PURPOSE:To make it feasible to form thin film patterns on any specified part of substrate by means of arranging a substrate mounting table movable in two directions rectangular to each other on a plane level with the substrate. CONSTITUTION:Reaction gas 4 supplied from an inlet 8 and nozzle 15 flows above a substrate 5 to be irradiated with laser beams 14 causing photochemical reaction resultantly forming thin films within extremely narrow range on the substrate 5. At this time, the thin films be formed only on the part of substrate 5 irradiated with the laser beams 11 not to be formed on any other parts on the substrate 5 making it feasible to form thin film patterns on any specified part of the substrate 5.
申请公布号 JPS61108128(A) 申请公布日期 1986.05.26
申请号 JP19840230749 申请日期 1984.11.01
申请人 MITSUBISHI ELECTRIC CORP 发明人 KOBAYASHI TOSHIYUKI;OTOMO YOSHIMI;KINOSHITA YOSHIMI;ODA MASAO
分类号 H01L21/205;H01L21/263 主分类号 H01L21/205
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