| 摘要 |
PURPOSE:To obtain a film having excellent characteristics by a method wherein an activating seed which is grown by decomposing a compound containing silicon and halogen and an oxygen compound which chemically interacts with said activating seed are introduced separately into the film forming space where a deposited film is formed on a substrate, and an excitation-reaction is performed on the compound by the irradiation of photo energy. CONSTITUTION:A substrate retaining stand 102 having a built-in heating heater 104 is placed in a deposition chamber 101, a film substrate 103 such as polyethylene terephthalate and the like is placed thereon, the deposition chamber 101 is decompressed, and the substrate 103 is heated up to 100-105 deg.C. Then, mixed gas is fed into the deposition chamber 101 from gas supply sources 106-109 using a gas introducing pipe 110, and at the same time, solid-state Si grains 114 fused by an electric furnace and the activating seed of SiF4 blown into the deposition chamber 101 are fed into the deposition chamber 101 using an introducing pipe 116. Subsequently,s a beam of light emitted from the photo energy generating device 117 such as a mercury lamp is made to irradiate on the substrate 103, and an oxygen-containing amorphous film of I type, P type, N type and the like is deposited on the substrate 103. |
