| 摘要 |
PURPOSE:To prevent the decrease in DC amplification factor hFE due to the intrusion of impurity ions, by covering a base layer between an emitter-base junction and a collector-base junction by an emitter electrode. CONSTITUTION:A base layer 2 of an NPN transistor is covered by an emitter electrode 10 of, e.g., Al. Therefore, even if impurity ions, which are transmitted through a surface protecting film 8, are intruded, the impurity ions do not reach an oxide film 7 on a base region 2 between the junction of an emitter 3 and the base 2 and the junction of a collector 1 and the base 2. Therefore parasitic channels are not generated and hFE is not decreased. |
