| 摘要 |
PURPOSE:To obtain a head having good characteristics at a good yield by decreasing the adverse influence by the oxidation of a magneto-resistance thin film during production process and to eliminate the adverse influence of the magneto-resistance thin film on a magnetic sensitive part owing to etching. CONSTITUTION:The magneto-resistance thin film 2 of 'Permalloy(R)', etc. having several hundreds Angstrom film thickness and a protective insulating film 6 of SiO2 having several thousands Angstrom film thickness are first continuously formed on a substrate 1 consisting of glass, etc. by sputtering method, etc. without taking out the substrate into the air in the mid-way of the process. A mask of a photoresist 4 is then formed to pattern the layer 6 and the film 2 to a magnetoresistance element, then the photoresist 4 is removed. The mask of the photoresist 4 is freshly formed and after such sample is put into a vacuum vessel, the layer 6 formed on the film 2 at the point to be formed as the juncture of conductors for signal detection except the magnetic sensitive part of the film 2 is subjected to ion etching by using gaseous CF4. The removal of the film 6 formed on the film 2 is made possible by the above-mentioned stage without etching said film. |
