| 摘要 |
PURPOSE:To increase the capacitance of a capacitor by forming a groove for shaping the capacitor in a self-alignment manner with a gate electrode for a MOS transistor. CONSTITUTION:Insulating films 121, 122, a gate insulating film 13, a gate electrode material film 14, a substrate layer 15 having etching characteristics different from a P type Si substrate 11 and a photo-resist 16 are formed in a field region surrounding an island region in the substrate 1. The layer 15, the film 14 and the film 13 are removed in succession while using the resist 16 as a mask to shape gate electrodes 141, 142, and N type conductive layers 171, 172, 18 are formed. Grooves 201, 202 for shaping a capacitor are formed to the substrate 11 while employing the films 121, 122 and gate electrode regions 141, 142, 151, 152 as masks, insulating films 211, 212 are shaped inside the grooves 201, 202, and capacitor electrodes 221, 222, an insulating layer 23 and an Al electrode 24 are formed. |
