| 摘要 |
PURPOSE:To produce a highly reliable semiconductor device at a low cost by a method wherein a capacitor, wherein an insulating layer on a chip mount serves as the dielectric material and the chip mount and a conductive layer on the insulating layer as the two electrodes, is built between two power supply electrode lines. CONSTITUTION:On a semiconductor chip mount 2d composed of a conductive material, there is a first insulating layer 18d composed of a material of high dielectric constant. On the insulating layer 18d, there is a first conductive layer 19d. On the layer 19d, there is a second insulating layer 20d with a portion of the layer 19d exposed therethrough. On the layer 20d, there is a second conductive layer 21d, separated from the exposed portion of the layer 19d. On the layer 21d, there is a semiconductor chip 9d fixed secure thereto. The first power supply electrode 13d on the chip 9d is connected electrically to the layer 19d exposed in the layer 20d, and the second power supply electrode 14d to the chip mount 2d. With the device designed as such, capacity is generated between the lines of the electrodes 13d, 14d equivalent in size to that of a capacitor wherein the layer 18d serves as a dielectric layer and the mount 2d and layer 19d as the two electrodes. |
