| 摘要 |
PURPOSE:To form a film of uniform thickness by reacting with the excitation of discharge energy a raw material for forming deposited film and an active seed introduced separately into a film forming chamber. CONSTITUTION:A substrate 103 is mounted on a substrate support 102 provided in a film forming chamber 101 and is heated by a heater 104. A compound containing germanium and a halogen and supplied from a pipe 115 is decomposed in a decomposition space 112 and an obtained active seed is introduced to the film forming chamber 101 through a pipe 116. On the other hand, a germanium compound for the raw material of forming a deposited film, an impurity element, etc. are introduced in the film forming chamber 101 through a pipe 110 from gas supply sources 106-109. Each introduced gas is given discharge energy by a discharge energy generation equipment 117 for excitation and is mutually reacted. This enables forming of the deposited film of uniform thickness on the substrate 103. |
