| 摘要 |
PURPOSE:To increase the area of a MOS capacitor by length on a pattern without deepening a groove in the MOS capacitor by arranging said groove in a shape with a manner that the groove surrounds the periphery of a MOS transistor region. CONSTITUTION:An insulating film consisting of a section surrounding the whole memory cell region and a section 22 formed into the section 21 to a U-shape and a capacitor groove 3 surrounding a MOS transistor forming region surrounded by the film 22 are formed to a p<-> type Si substrate 1, and an n type layer 4 as a substrate-side electrode for a capacitor is shaped onto the base and side surface of the capacitor groove 3. A capacitor electrode 6, a gate electrode 8 through a gate insulating film 7 and n<+> type layers 9, 10 as a drain and a source are formed, an insulating film 11 is deposited onto the whole upper surfaces of the electrodes 6, 8 and the layers 9, 10, a contact hole is bored to the film 11, an Al wiring 12 is shaped and used as a bit line, and the electrode 8 is employed as a word line. |
