| 摘要 |
PURPOSE:To improve radioactive stability, by distributing III-family or II-family element selectively at regions specified in the direction of the thickness of an oxide film on a substrate. CONSTITUTION:At the regions specified in the direction of the thickness of an oxide film 1 on a semiconductor substrate 2, III-family or II-family element, for example Al, is selectively distributed. Since Al has outer-shell electrons fewer by one than that of Si, electrons for being coupled with oxygen atoms existing thereabout are short by one, and therefore Al has a tendency to become stable by capturing one external electron. That is, Al serves as electron capturing centers in an SiO2 film. In this way, positive charges resulting from radioactive rays can be effectively canceled. |
