| 摘要 |
PURPOSE:To miniaturize a device and improve the degree of integration further as electrode structure by integrally constituting a transistor electrode and a capacitance electrode organizing a dynamic memory IC cell for one transistor/ cell. CONSTITUTION:A device is constituted by a semiconductor substrate 1, a diffusion layer 2, a gate insulating film 3 and an electrode 7 formed by unifying a transistor and a MOS capacitance organizing a cell. Consequently, even writing or reading operation may be conducted at fixed potential on the selection of the cell and on non-selection thereof, and the cell need not take the same potential on selection and on non-selection. Accordingly, no trouble is generated on operation, thereof even when a cell capacitance electrode and a cell transistor electrode are unified and fixed potential is applied on the selection of the cell. |
